2N3906BU. 数据手册
数据手册规格
| 数据手册名称 | 2N3906, MMBT3906, PZT3906 |
|---|---|
| 文件大小 | 515.535 千字节 |
| 文件类型 | |
| 页数 | 11 |
下载数据手册 2N3906, MMBT3906, PZT3906 |
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其他文档
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技术规格
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Bulk
- Part Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
- Base Part Number: 2N3906
- detail: Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 625mW Through Hole TO-92-3
